FDG316P دیتاشیت

FDG316P

مشخصات دیتاشیت

نام دیتاشیت FDG316P
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

مشاهده دیتاشیت FDG316P

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مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FDG316P
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 750mW
  • Total Gate Charge (Qg@Vgs): 5nC@10V
  • Drain Source Voltage (Vdss): 30V
  • Input Capacitance (Ciss@Vds): 165pF@15V
  • Continuous Drain Current (Id): 1.6A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 190mΩ@10V,1.6A
  • Package: SC-70-6
  • Manufacturer: onsemi
  • Series: PowerTrench®
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 1.6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 750mW (Ta)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-88 (SC-70-6)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Base Part Number: FDG316
  • detail: P-Channel 30V 1.6A (Ta) 750mW (Ta) Surface Mount SC-88 (SC-70-6)

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